@inproceedings{dba7a6751567472387fb462a1433eff6,
title = "Numerical analysis on the effect of electron blocking layer in 365-nm ultraviolet light-emitting diodes",
abstract = "For 365-nm ultraviolet light-emitting diodes (UV LEDs), an electron blocking layer (EBL) is usually utilized to mitigate electron overflow. However, using EBL might obstruct holes from injecting into the active region. Moreover, the large polarization field in conventional EBL might also pull down the effective barrier height for electrons, and thus the electrons could easily overflow to the p-side region. To solve the above drawbacks, in this study, the Al content and p-doping concentration of the EBL in typical 365-nm UV LEDs are investigated systematically. Specifically, designs of AlGaN/GaN superlattice EBL and Al-content-graded EBL are explored in detail.",
author = "Chen, {Fang Ming} and Chang, {Jih Yuan} and Kuo, {Yen Kuang} and Lin, {Bing Cheng} and Kuo, {Hao Chung}",
year = "2015",
month = jan,
day = "1",
doi = "10.1117/12.2077946",
language = "English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Jen-Inn Chyi and Hadis Morkoc and Hiroshi Fujioka",
booktitle = "Gallium Nitride Materials and Devices X",
address = "United States",
note = "Gallium Nitride Materials and Devices X ; Conference date: 09-02-2015 Through 12-02-2015",
}