Numerical analysis on the effect of electron blocking layer in 365-nm ultraviolet light-emitting diodes

Fang Ming Chen, Jih Yuan Chang, Yen Kuang Kuo, Bing Cheng Lin, Hao Chung Kuo

研究成果: Conference contribution

摘要

For 365-nm ultraviolet light-emitting diodes (UV LEDs), an electron blocking layer (EBL) is usually utilized to mitigate electron overflow. However, using EBL might obstruct holes from injecting into the active region. Moreover, the large polarization field in conventional EBL might also pull down the effective barrier height for electrons, and thus the electrons could easily overflow to the p-side region. To solve the above drawbacks, in this study, the Al content and p-doping concentration of the EBL in typical 365-nm UV LEDs are investigated systematically. Specifically, designs of AlGaN/GaN superlattice EBL and Al-content-graded EBL are explored in detail.

原文English
主出版物標題Gallium Nitride Materials and Devices X
編輯Jen-Inn Chyi, Hadis Morkoc, Hiroshi Fujioka
發行者SPIE
ISBN(電子)9781628414530
DOIs
出版狀態Published - 2015 一月 1
事件Gallium Nitride Materials and Devices X - San Francisco, United States
持續時間: 2015 二月 92015 二月 12

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
9363
ISSN(列印)0277-786X
ISSN(電子)1996-756X

Other

OtherGallium Nitride Materials and Devices X
國家United States
城市San Francisco
期間15-02-0915-02-12

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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