摘要
For 365-nm ultraviolet light-emitting diodes (UV LEDs), an electron blocking layer (EBL) is usually utilized to mitigate electron overflow. However, using EBL might obstruct holes from injecting into the active region. Moreover, the large polarization field in conventional EBL might also pull down the effective barrier height for electrons, and thus the electrons could easily overflow to the p-side region. To solve the above drawbacks, in this study, the Al content and p-doping concentration of the EBL in typical 365-nm UV LEDs are investigated systematically. Specifically, designs of AlGaN/GaN superlattice EBL and Al-content-graded EBL are explored in detail.
| 原文 | English |
|---|---|
| 主出版物標題 | Gallium Nitride Materials and Devices X |
| 編輯 | Jen-Inn Chyi, Hadis Morkoc, Hiroshi Fujioka |
| 發行者 | SPIE |
| ISBN（電子） | 9781628414530 |
| DOIs | |
| 出版狀態 | Published - 2015 一月 1 |
| 事件 | Gallium Nitride Materials and Devices X - San Francisco, United States 持續時間: 2015 二月 9 → 2015 二月 12 |
出版系列
| 名字 | Proceedings of SPIE - The International Society for Optical Engineering |
|---|---|
| 卷 | 9363 |
| ISSN（列印） | 0277-786X |
| ISSN（電子） | 1996-756X |
Other
| Other | Gallium Nitride Materials and Devices X |
|---|---|
| 國家 | United States |
| 城市 | San Francisco |
| 期間 | 15-02-09 → 15-02-12 |
指紋
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering
引用此文
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Numerical analysis on the effect of electron blocking layer in 365-nm ultraviolet light-emitting diodes. / Chen, Fang Ming; Chang, Jih Yuan; Kuo, Yen Kuang; Lin, Bing Cheng; Kuo, Hao Chung.
Gallium Nitride Materials and Devices X. 編輯 / Jen-Inn Chyi; Hadis Morkoc; Hiroshi Fujioka. SPIE, 2015. 93632B (Proceedings of SPIE - The International Society for Optical Engineering; 卷 9363).研究成果: Conference contribution
TY - GEN
T1 - Numerical analysis on the effect of electron blocking layer in 365-nm ultraviolet light-emitting diodes
AU - Chen, Fang Ming
AU - Chang, Jih Yuan
AU - Kuo, Yen Kuang
AU - Lin, Bing Cheng
AU - Kuo, Hao Chung
PY - 2015/1/1
Y1 - 2015/1/1
N2 - For 365-nm ultraviolet light-emitting diodes (UV LEDs), an electron blocking layer (EBL) is usually utilized to mitigate electron overflow. However, using EBL might obstruct holes from injecting into the active region. Moreover, the large polarization field in conventional EBL might also pull down the effective barrier height for electrons, and thus the electrons could easily overflow to the p-side region. To solve the above drawbacks, in this study, the Al content and p-doping concentration of the EBL in typical 365-nm UV LEDs are investigated systematically. Specifically, designs of AlGaN/GaN superlattice EBL and Al-content-graded EBL are explored in detail.
AB - For 365-nm ultraviolet light-emitting diodes (UV LEDs), an electron blocking layer (EBL) is usually utilized to mitigate electron overflow. However, using EBL might obstruct holes from injecting into the active region. Moreover, the large polarization field in conventional EBL might also pull down the effective barrier height for electrons, and thus the electrons could easily overflow to the p-side region. To solve the above drawbacks, in this study, the Al content and p-doping concentration of the EBL in typical 365-nm UV LEDs are investigated systematically. Specifically, designs of AlGaN/GaN superlattice EBL and Al-content-graded EBL are explored in detail.
UR - http://www.scopus.com/inward/record.url?scp=84931831678&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84931831678&partnerID=8YFLogxK
U2 - 10.1117/12.2077946
DO - 10.1117/12.2077946
M3 - Conference contribution
AN - SCOPUS:84931831678
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Gallium Nitride Materials and Devices X
A2 - Chyi, Jen-Inn
A2 - Morkoc, Hadis
A2 - Fujioka, Hiroshi
PB - SPIE
ER -