Numerical analysis of using superlattice-AlGaN/InGaN as electron blocking layer in green InGaN light-emitting diodes

Fang Ming Chen, Bo Ting Liou, Yi An Chang, Jih Yuan Chang, Yih Ting Kuo, Yen Kuang Kuo

研究成果: Conference contribution

8 引文 斯高帕斯(Scopus)

摘要

In this study, a specific design on the electron blocking layer (EBL) by band engineering is investigated numerically with an aim to improve the output performance and to reduce the efficiency droop in green LEDs. Systematic analyses including the energy band diagrams, carrier distributions in the active region, and electron leakage current are given and the simulation results show that the proposed lattice-compensated superlattice-AlGaN/InGaN EBL can provide better optical and electrical output performances when compared to the conventional rectangular AlGaN EBL. The output power of the green LED can be enhanced by a factor of 52% and the applied voltage can be reduced from 5.08 V to 4.53 V at an injection current of 1500 mA. The internal quantum efficiency is improved and the percentage of the efficiency droop can also be reduced from 58% to 37%, which is mainly attributed to the successful suppression of electron leakage current and improvement in hole injection efficiency.

原文English
主出版物標題Gallium Nitride Materials and Devices VIII
DOIs
出版狀態Published - 2013 六月 12
事件SPIE Symposium on Gallium Nitride Materials and Devices VIII - San Francisco, CA, United States
持續時間: 2013 二月 42013 二月 7

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
8625
ISSN(列印)0277-786X

Other

OtherSPIE Symposium on Gallium Nitride Materials and Devices VIII
國家United States
城市San Francisco, CA
期間13-02-0413-02-07

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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