Novel optical properties of ZnTe/CdSe superlattice

M. C. Kuo, M. J. Ou-yang, C. S. Yang, J. L. Shen, P. Y. Tseng, K. C. Chiu, W. C. Chou, H. Luo, A. Petrou, Yu Tai Shih

研究成果: Article

1 引文 (Scopus)

摘要

Type II ZnTe/CdSe superlattices were grown by molecular beam epitaxy on a GaAs substrate. Radiative type II transitions between electrons confined in the CdSe and holes confined in the ZnTe were observed in the photoluminescence spectra. For samples with thin CdSe layer, strong absorptive and weak emissive type I transitions, which involves both electrons and holes confined in the CdSe layer, were also found. For the radiative type II transitions, the excitonic activation energy decreases with CdSe layer thickness. While, for the type I emissive transitions, the excitonic activation energy increases with the CdSe layer thickness.

原文English
頁(從 - 到)178-186
頁數9
期刊Chinese Journal of Physics
40
發行號2
出版狀態Published - 2002 四月 1

指紋

optical properties
activation energy
superlattices
electrons
molecular beam epitaxy
photoluminescence

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

引用此文

Kuo, M. C., Ou-yang, M. J., Yang, C. S., Shen, J. L., Tseng, P. Y., Chiu, K. C., ... Shih, Y. T. (2002). Novel optical properties of ZnTe/CdSe superlattice. Chinese Journal of Physics, 40(2), 178-186.
Kuo, M. C. ; Ou-yang, M. J. ; Yang, C. S. ; Shen, J. L. ; Tseng, P. Y. ; Chiu, K. C. ; Chou, W. C. ; Luo, H. ; Petrou, A. ; Shih, Yu Tai. / Novel optical properties of ZnTe/CdSe superlattice. 於: Chinese Journal of Physics. 2002 ; 卷 40, 編號 2. 頁 178-186.
@article{2cc4317ff42542b680829ae1474f1fa8,
title = "Novel optical properties of ZnTe/CdSe superlattice",
abstract = "Type II ZnTe/CdSe superlattices were grown by molecular beam epitaxy on a GaAs substrate. Radiative type II transitions between electrons confined in the CdSe and holes confined in the ZnTe were observed in the photoluminescence spectra. For samples with thin CdSe layer, strong absorptive and weak emissive type I transitions, which involves both electrons and holes confined in the CdSe layer, were also found. For the radiative type II transitions, the excitonic activation energy decreases with CdSe layer thickness. While, for the type I emissive transitions, the excitonic activation energy increases with the CdSe layer thickness.",
author = "Kuo, {M. C.} and Ou-yang, {M. J.} and Yang, {C. S.} and Shen, {J. L.} and Tseng, {P. Y.} and Chiu, {K. C.} and Chou, {W. C.} and H. Luo and A. Petrou and Shih, {Yu Tai}",
year = "2002",
month = "4",
day = "1",
language = "English",
volume = "40",
pages = "178--186",
journal = "Chinese Journal of Physics",
issn = "0577-9073",
publisher = "Physical Society of the Republic of China",
number = "2",

}

Kuo, MC, Ou-yang, MJ, Yang, CS, Shen, JL, Tseng, PY, Chiu, KC, Chou, WC, Luo, H, Petrou, A & Shih, YT 2002, 'Novel optical properties of ZnTe/CdSe superlattice', Chinese Journal of Physics, 卷 40, 編號 2, 頁 178-186.

Novel optical properties of ZnTe/CdSe superlattice. / Kuo, M. C.; Ou-yang, M. J.; Yang, C. S.; Shen, J. L.; Tseng, P. Y.; Chiu, K. C.; Chou, W. C.; Luo, H.; Petrou, A.; Shih, Yu Tai.

於: Chinese Journal of Physics, 卷 40, 編號 2, 01.04.2002, p. 178-186.

研究成果: Article

TY - JOUR

T1 - Novel optical properties of ZnTe/CdSe superlattice

AU - Kuo, M. C.

AU - Ou-yang, M. J.

AU - Yang, C. S.

AU - Shen, J. L.

AU - Tseng, P. Y.

AU - Chiu, K. C.

AU - Chou, W. C.

AU - Luo, H.

AU - Petrou, A.

AU - Shih, Yu Tai

PY - 2002/4/1

Y1 - 2002/4/1

N2 - Type II ZnTe/CdSe superlattices were grown by molecular beam epitaxy on a GaAs substrate. Radiative type II transitions between electrons confined in the CdSe and holes confined in the ZnTe were observed in the photoluminescence spectra. For samples with thin CdSe layer, strong absorptive and weak emissive type I transitions, which involves both electrons and holes confined in the CdSe layer, were also found. For the radiative type II transitions, the excitonic activation energy decreases with CdSe layer thickness. While, for the type I emissive transitions, the excitonic activation energy increases with the CdSe layer thickness.

AB - Type II ZnTe/CdSe superlattices were grown by molecular beam epitaxy on a GaAs substrate. Radiative type II transitions between electrons confined in the CdSe and holes confined in the ZnTe were observed in the photoluminescence spectra. For samples with thin CdSe layer, strong absorptive and weak emissive type I transitions, which involves both electrons and holes confined in the CdSe layer, were also found. For the radiative type II transitions, the excitonic activation energy decreases with CdSe layer thickness. While, for the type I emissive transitions, the excitonic activation energy increases with the CdSe layer thickness.

UR - http://www.scopus.com/inward/record.url?scp=0036269282&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036269282&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0036269282

VL - 40

SP - 178

EP - 186

JO - Chinese Journal of Physics

JF - Chinese Journal of Physics

SN - 0577-9073

IS - 2

ER -

Kuo MC, Ou-yang MJ, Yang CS, Shen JL, Tseng PY, Chiu KC 等. Novel optical properties of ZnTe/CdSe superlattice. Chinese Journal of Physics. 2002 4月 1;40(2):178-186.