Negative differential conductance observed in a lateral double constriction device

J. C. Wu, M. N. Wybourne, C. Berven, S. M. Goodnick, Doran D. Smith

研究成果: Article

15 引文 斯高帕斯(Scopus)

摘要

Lateral double point contact devices were fabricated using a split-gate high electron mobility transistor. The low-temperature source-drain characteristics show pronounced S-shaped negative differential conductance that can be independently controlled by an applied gate bias. The mechanism for the observed switching behavior is believed to be similar to that proposed for heterostructure hot electron diodes.

原文English
頁(從 - 到)2425-2427
頁數3
期刊Applied Physics Letters
61
發行號20
DOIs
出版狀態Published - 1992 十二月 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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