Negative differential conductance in a lateral hot-electron device

J. C. Wu, M. N. Wybourne, C. Berven, S. M. Goodnick, D. D. Smith

研究成果: Article同行評審

摘要

We report on the observations of S-type negative differential conductance in the current-voltage characteristics of a pinched cavity quantum dot structure. An energy balance approach is used to explain the existence of bistable current-voltage characteristics due to thermal runaway of the hot carriers in the dot structure. This runaway is shown to arise from heating of carriers in the quantum dot by incident electrons injected over the barrier of the input constriction. The observed S-type negative differential conductance is controlled by a third-terminal gate bias, and may be turned on or off depending on the bias voltage. Thus the effect may be utilized to realize a multiterminal switching device.

原文English
文章編號140
頁(從 - 到)922-925
頁數4
期刊Semiconductor Science and Technology
9
發行號5 S
DOIs
出版狀態Published - 1994 十二月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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