Magnetic field enhanced resonant tunneling in a silicon nanowire single-electron-transistor

K. Aravind, M. C. Lin, I. L. Ho, C. S. Wu, Watson Kuo, C. H. Kuan, K. S. Chang-Liao, C. D. Chen

研究成果: Article

1 引文 斯高帕斯(Scopus)

摘要

We report fabrication, measurement and simulation of silicon single-electron-transistors made on silicon-on-insulator wafers. At T~2 K, these devices showed clear Coulomb blockade structures. An external perpendicular magnetic field was found to enhance the resonant tunneling peak and was used to predict the presence of two laterally coupled quantum dots in the narrow constriction between the source-drain electrodes. The proposed model and measured experimental data were consistently explained using numerical simulations.

原文English
頁(從 - 到)2509-2512
頁數4
期刊Journal of Nanoscience and Nanotechnology
12
發行號3
DOIs
出版狀態Published - 2012 七月 3

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

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    Aravind, K., Lin, M. C., Ho, I. L., Wu, C. S., Kuo, W., Kuan, C. H., Chang-Liao, K. S., & Chen, C. D. (2012). Magnetic field enhanced resonant tunneling in a silicon nanowire single-electron-transistor. Journal of Nanoscience and Nanotechnology, 12(3), 2509-2512. https://doi.org/10.1166/jnn.2012.5797