Magnetic domain reversal behavior for various patterned hole depths

Te Ho Wu, L. X. Ye, Chun Shin Yeh, Y. W. Huang, Bohr Ran Huang, J. C. Wu

研究成果: Article

2 引文 斯高帕斯(Scopus)

摘要

We have measured the domain reversal behavior for amorphous alloys of a rare earth-transition metal DyFeCo thin film with hole arrays by means of a modified Kerr microscope. We found that the shallow hole arrays had sharper domain boundaries than the deeper hole arrays when an applied magnetic field nears the coercivity. We also found that, when the hole depth is shallower, the magnetic anisotropy becomes more profound for the domain pinning effect. Moreover, the magnetic domain pinning effect due to the hole barrier becomes significantly practical as the hole depth approaches the film thickness.

原文English
頁(從 - 到)950-952
頁數3
期刊IEEE Transactions on Magnetics
41
發行號2
DOIs
出版狀態Published - 2005 二月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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