Low thermal conductivity and enhanced thermoelectric performance of nanostructured Al-doped ZnTe

Ankam Bhaskar, Yi Hsuan Pai, Wei Ming Wu, Ching Lin Chang, Chia Jyi Liu

研究成果: Article同行評審

14 引文 斯高帕斯(Scopus)


Nanostructured Zn1-xAlxTe (0≤x≤0.15) samples have been fabricated using hydrothermal synthesis and evacuating-and-encapsulating sintering. Thermoelectric properties are measured at 300-600 K. The thermopower of all the samples is positive, indicating that the predominant carriers are holes over the entire temperature range. The hole concentration increases with increasing Al3+ content. Based on the charge neutrality, the hole concentration is expected to decrease upon Al doping. However, the x-ray absorption spectroscopy indicates the electrons transfer from Zn 4s to Te 5d states upon Al doping, which might explain that the increase of hole concentration upon partial Al3+ substitution of Zn2+. Using Slack's model for estimating the lattice thermal conductivity, the Grüneisen parameter at 300 K is found to increase with Al doping content. The highest power factor (1.52 μW m-1 K-2) and highest dimensionless figure of merit (0.075) are attained at 575 K for Zn0.85Al0.15Te, representing an improvement of about 508% and 851% with respect to the nondoped ZnTe at the same temperature. These results suggest that aluminum is an effective doping element for improving the thermoelectric properties of ZnTe.

頁(從 - 到)1070-1076
期刊Ceramics International
出版狀態Published - 2016 一月

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry

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