Low resistivity GaN-based polarization-induced tunnel junctions

Miao Chan Tsai, Benjamin Leung, Ta Cheng Hsu, Yen Kuang Kuo

研究成果: Article

8 引文 斯高帕斯(Scopus)

摘要

The use of polarization charges in nitride based tunnel junctions enables a wide range of design approaches to increase the tunneling current to magnitudes usable in high efficiency GaN-based devices, including enhanced multijunction solar cells, optoelectronic and electronic devices. Here, an integrated computational model is used to explore and design the dopant concentration profile and implement the hybrid use of both AlGaN and InGaN layers to systematically optimize the configuration of polarization charges in the structure. The proposed tunnel junction structure, with indium composition and doping density compatible for insertion into a typical Ga-polar InGaN multiple-quantum well light-emitting diode structure, allows a high tunneling efficiency under reverse bias condition, achieving a resistivity of 7.8 × 10-3 Ω·cm2.

原文English
文章編號6627970
頁(從 - 到)3575-3581
頁數7
期刊Journal of Lightwave Technology
31
發行號22
DOIs
出版狀態Published - 2013 十一月 25

    指紋

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

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