Low frequency noise characterization of CoFeB/MgO/CoFeB MTJ based perpendicular field sensor

Y. Lee, B. Das, L. Li, Y. Suen, L. Horng, T. Wu, C. Chang, J. Wu

研究成果: Conference contribution

摘要

In a magnetic tunnel junction (MTJ) device, the potential barrier height of the barrier layer, in presence of a bias voltage or an external magnetic field, can be affected by defects present in the barrier layer or at the barrier layer/ferromagnetic (FM) layer interfaces of the device. The defects may have structural as well as magnetic origin. Fluctuations of such defects (with a time scale that corresponds to low frequency regime of <10 kHz) can significantly change the tunnelling probability of conduction electrons through the insulating barrier layer leading to resistance fluctuations and hence affecting the device performance at that frequency range. Hence, considerable efforts have been made to understand the nature of the fluctuations and to find the ways to minimize it but, mostly have done for the MTJ devices that have parallel (or anti-parallel) configuration of the free and pinned layer magnetizations. Here, we are reporting low frequency electrical noise study of micron sized and elliptical shaped Co40Fe40B20/MgO/ Co20Fe60B20 based MTJ devices which have the reference and sensing layer magnetization directions along the out of plane and in plane directions, respectively designed for high sensitive perpendicular magnetic field sensor application.

原文English
主出版物標題2015 IEEE International Magnetics Conference, INTERMAG 2015
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781479973224
DOIs
出版狀態Published - 2015 七月 14
事件2015 IEEE International Magnetics Conference, INTERMAG 2015 - Beijing, China
持續時間: 2015 五月 112015 五月 15

出版系列

名字2015 IEEE International Magnetics Conference, INTERMAG 2015

Other

Other2015 IEEE International Magnetics Conference, INTERMAG 2015
國家China
城市Beijing
期間15-05-1115-05-15

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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