Leakage currents through In/MgO/n-type Si/In structures

Hou Yen Tsao, Yow Jon Lin, Ya Hui Chen, Hsing Cheng Chang

研究成果: Article

8 引文 斯高帕斯(Scopus)

摘要

Leakage currents through In/MgO/n-type Si/In structures were studied. The electrical conduction investigations suggest that the leakage behavior is governed by the Schottky (PooleFrenkel) emission for the gate (substrate) injection. This is because of strong leakage current dependent on the interfacial property of devices. It is shown that the discrepancy in the MgO permittivity extracted from the Schottky and PooleFrenkel emissions is due to the formation of intermediate MgSixOy layer.

原文English
頁(從 - 到)693-696
頁數4
期刊Solid State Communications
151
發行號9
DOIs
出版狀態Published - 2011 五月 1

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

指紋 深入研究「Leakage currents through In/MgO/n-type Si/In structures」主題。共同形成了獨特的指紋。

  • 引用此