Leakage conduction mechanism of top-contact organic thin film transistors

研究成果: Article

14 引文 (Scopus)

摘要

This paper presents an analysis of the leakage conduction mechanism of top-contact organic thin film transistors. According to the experimental result, the author found that the dominant leakage conduction mechanism of top-contact devices is the Schottky emission and the gate leakage current dramatically increases with an increase in applied voltage. It is important to identify the gate leakage effect for understanding the actual device operation mechanism and enhancing the device performance.

原文English
頁(從 - 到)2628-2630
頁數3
期刊Synthetic Metals
160
發行號23-24
DOIs
出版狀態Published - 2010 十二月 1

指紋

Thin film transistors
Leakage currents
leakage
transistors
conduction
Electric potential
thin films
electric potential

All Science Journal Classification (ASJC) codes

  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Chemistry
  • Metals and Alloys
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

引用此文

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Leakage conduction mechanism of top-contact organic thin film transistors. / Lin, Yow-Jon.

於: Synthetic Metals, 卷 160, 編號 23-24, 01.12.2010, p. 2628-2630.

研究成果: Article

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