Leakage conduction behavior for top- and bottom-contact pentacene thin film transistors

Yow Jon Lin, Chang Lin Wu, Chia Hung Chiang, Po Chih Kuo

研究成果: Article同行評審

摘要

The leakage conduction mechanisms for top-contact and bottom-contact pentacene-based organic thin film transistors (OTFTs) are studied. OTFTs that use a bottom-contact design exhibit lower leakage conduction than those that use a top-contact design. For top-contact OTFTs, the dominant leakage conduction mechanism is via Schottky emission and the density of the leakage current increases significantly as the bias voltage increases. For bottom-contact OTFTs, the dominant leakage conduction mechanism is via displacement current. OTFTs that use a bottom-contact design exhibit lower leakage conduction than those that use a top-contact design.

原文English
頁(從 - 到)797-800
頁數4
期刊Indian Journal of Physics
94
發行號6
DOIs
出版狀態Published - 2020 六月 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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