Investigation of violet InGaN laser diodes with normal and reversed polarizations

Sheng Horng Yen, Yen Kuang Kuo, Meng Lun Tsai, Ta Cheng Hsu

研究成果: Article

22 引文 斯高帕斯(Scopus)

摘要

The polarity is a special property for III-nitride materials with wurtzite structure along different orientations. The influence of normal and reversed polarizations on laser performance of the violet laser diodes with Ga-face and N-face configurations is studied numerically. Specifically, the laser performance, band diagram, carrier confinement, and emission wavelength are investigated. The results show that the threshold current is improved and emission wavelength is redshifted when the laser diode is with reversed polarization.

原文English
文章編號201118
期刊Applied Physics Letters
91
發行號20
DOIs
出版狀態Published - 2007 十一月 23

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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