Investigation of surface treatments for nonalloyed ohmic contact formation in Ti/Al contacts to n-type GaN

Yow Jon Lin, Ching Ting Lee

研究成果: Article

57 引文 (Scopus)

摘要

To investigate the possibility of preparing a nonalloyed ohmic contact to n-type GaN, the effects of GaN surface treatments on the metal/GaN interface were studied using x-ray photoelectron spectroscopy. A specific contact resistance of 5.0 × 10-5 Ω cm2 for the Ti/Al nonalloyed ohmic contacts to (NH4)2Sx-treated n-type GaN can be obtained. The nonalloyed ohmic contact formation would be impeded by the native oxide and the hydroxyl induced from the surface treatment of chemical solutions.

原文English
頁(從 - 到)3986-3988
頁數3
期刊Applied Physics Letters
77
發行號24
DOIs
出版狀態Published - 2000 十二月 11

指紋

surface treatment
electric contacts
contact resistance
x ray spectroscopy
photoelectron spectroscopy
oxides
metals

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

引用此文

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N2 - To investigate the possibility of preparing a nonalloyed ohmic contact to n-type GaN, the effects of GaN surface treatments on the metal/GaN interface were studied using x-ray photoelectron spectroscopy. A specific contact resistance of 5.0 × 10-5 Ω cm2 for the Ti/Al nonalloyed ohmic contacts to (NH4)2Sx-treated n-type GaN can be obtained. The nonalloyed ohmic contact formation would be impeded by the native oxide and the hydroxyl induced from the surface treatment of chemical solutions.

AB - To investigate the possibility of preparing a nonalloyed ohmic contact to n-type GaN, the effects of GaN surface treatments on the metal/GaN interface were studied using x-ray photoelectron spectroscopy. A specific contact resistance of 5.0 × 10-5 Ω cm2 for the Ti/Al nonalloyed ohmic contacts to (NH4)2Sx-treated n-type GaN can be obtained. The nonalloyed ohmic contact formation would be impeded by the native oxide and the hydroxyl induced from the surface treatment of chemical solutions.

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