Investigation of InGaN green light-emitting diodes with chirped multiple quantum well structures

Yi An Chang, Yih Ting Kuo, Jih Yuan Chang, Yen Kuang Kuo

研究成果: Article

17 引文 斯高帕斯(Scopus)

摘要

The effect of using chirped multiple quantum-well (MQW) structures in InGaN green light-emitting diodes (LEDs) is numerically investigated. An active structure, which is with both thick QWs with low indium composition on the p-side and thin QWs with high indium composition next to the n-region, is presented in this study. The thickness and indium composition in each single QW is specifically tuned to emit the same green emission spectrum. Comparing with conventional active structure design of green LEDs, which is using uniform MQWs, the output power is increased by 27% at 20 mA, and by 15% at 100 mA current injections. This improvement is mainly attributed to the enhanced efficiency of carrier injection into QWs and the improved capability of carrier transport.

原文English
頁(從 - 到)2205-2207
頁數3
期刊Optics Letters
37
發行號12
DOIs
出版狀態Published - 2012 六月 15

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

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