Investigation of green InGaN light-emitting diodes with asymmetric AlGaN composition-graded barriers and without an electron blocking layer

Yi An Chang, Jih Yuan Chang, Yih Ting Kuo, Yen Kuang Kuo

研究成果: Article

24 引文 斯高帕斯(Scopus)

摘要

In this study, a green InGaN light-emitting diode with asymmetric AlGaN composition-graded barriers and without the use of an AlGaN electron blocking layer is presented to possess markedly enhanced optical and electrical performance. The simulation results show that the output power is increased by 10.0% and 33.2%, which corresponds to an increment of 7% and 29.4% in internal quantum efficiency, at 100 mA when the conventional GaN barriers are replaced by the asymmetric AlGaN composition-graded barriers and the commonly used AlGaN electron blocking layer is removed. The simulation results suggest that the improved device performance is due mainly to the markedly enhanced injection of holes into the active region.

原文English
文章編號251102
期刊Applied Physics Letters
100
發行號25
DOIs
出版狀態Published - 2012 六月 18

    指紋

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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