Investigation of degraded efficiency in blue InGaN multiple-quantum well light-emitting diodes

研究成果: Conference contribution

2 引文 斯高帕斯(Scopus)

摘要

The reduced peak efficiency and the efficiency droop afterward, i.e. the degraded efficiency, of blue InGaN lightemitting diodes (LEDs) is investigated numerically. It is depicted that the joint effects of multiple factors, including the influences of polarization-induced electric field, the phenomenon of current crowding, and the Auger and ShockleyRead-Hall (SRH) recombinations, are responsible for the degraded efficiency. Among them, the severe SRH recombination due to the poor crystalline quality is the main cause of reduced peak efficiency, while the serious Auger recombination resulted from high Auger recombination coefficient and non-uniform carrier distribution of the active region is the major factor contributing to efficiency droop. It is shown that the strong built-in polarization field and the crowded current flow will result in the nonuniform carrier distribution, and thus enlarge the Auger losses and the efficiency droop.

原文English
主出版物標題Physics and Simulation of Optoelectronic Devices XXIII
編輯Bernd Witzigmann, Yasuhiko Arakawa, Fritz Henneberger, Marek Osinski
發行者SPIE
ISBN(電子)9781628414479
DOIs
出版狀態Published - 2015 一月 1
事件23rd SPIE Conference on Physics and Simulation of Optoelectronic Devices - San Francisco, United States
持續時間: 2015 二月 92015 二月 12

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
9357
ISSN(列印)0277-786X
ISSN(電子)1996-756X

Other

Other23rd SPIE Conference on Physics and Simulation of Optoelectronic Devices
國家United States
城市San Francisco
期間15-02-0915-02-12

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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