The concept of a step-like quantum well is proposed with the purpose to reduce the influence of electrostatic field resulting from the piezoelectric effect on the optical performance of blue InGaN light-emitting diodes. Particularly, the optical properties of the LED structures with the In 0.23Ga0.77N single quantum well, In0.20Ga 0.80N/In0.26Ga0.74N step-like quantum well, and In0.26Ga0.74N/In0.20Ga0.80N step-like quantum well are numerically investigated in detail. Simulation results show that the In0.20Ga0.80N/In 0.26Ga0.74N step-like-quantum-well LED structure has the best optical performance in virtue of the improvement in spatial overlap of electrons and holes in the quantum well.
|頁（從 - 到）||621-626|
|期刊||Applied Physics A: Materials Science and Processing|
|出版狀態||Published - 2011 八月 1|
All Science Journal Classification (ASJC) codes
- Materials Science(all)