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Intrinsic and extrinsic effects on performance limitation of AlGaAs/GaAs double-barrier resonant tunneling structures
J. S. Wu
, C. P. Lee, C. Y. Chang, K. H. Chang, D. G. Liu, D. C. Liou
電子工程學系
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引文 斯高帕斯(Scopus)
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Chemical Compounds
Resonant tunneling
gallium arsenide
Scattering
Doping (additives)
Semiconductor quantum wells
Materials properties
Defects
Physics & Astronomy
resonant tunneling
valleys
aluminum gallium arsenides
barrier layers
scattering
performance
quantum wells
saturation
causes
defects
Engineering & Materials Science
Resonant tunneling
Scattering
Doping (additives)
Semiconductor quantum wells
Materials properties
Defects