Interface characteristics for graphene contact to n-type and p-type GaN observed by X-ray photoelectron spectroscopy

Chia Lung Tsai, Yow Jon Lin, Jian Huang Lin

研究成果: Article

5 引文 斯高帕斯(Scopus)

摘要

The interface characteristics of graphene/GaN samples using X-ray photoelectron spectroscopy (XPS) measurements are investigated. XPS makes it possible to extract a reliable barrier-height value. For graphene/n-type GaN (graphene/p-type GaN) samples, the Schottky barrier height is 0.85 (2.50) eV. To determine the Fermi-level pinning/unpinning at the graphene/GaN interfaces, an analysis is conducted according to the Schottky–Mott limit. It is shown that the Fermi energy level is unpinned and the barrier-height value is dependent on the work function of graphene. Investigation of graphene/GaN interfaces is important, and providing the other technique for surface potential control is possible.

原文English
頁(從 - 到)3052-3056
頁數5
期刊Journal of Materials Science: Materials in Electronics
26
發行號5
DOIs
出版狀態Published - 2015 五月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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