Influences of multiquantum barriers on carrier recombination in InGaN/GaN multiple-quantum-well light-emitting diodes

Tzer En Nee, Jen Cheng Wang, Hui Tang Shen, Ya Fen Wu, Yu Tai Shih, Chien Lin Lu

研究成果: Article

1 引文 (Scopus)

摘要

The influences of multiquantum barriers (MQBs) on the carrier confinement and carrier recombination in blue InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) have been investigated in depth over a broad range of temperatures from 20 to 300K. Time-resolved photoluminescence (TRPL) temporal decay was measured to examine the dynamics of the carriers in both devices. The exciton recombination times of the blue emission are 2.81 and 4.11 ns for the QWs with MQB and GaN barriers, respectively. The former is a reasonable value for the radiative recombination in the structure with MQBs, and results from the enhancement of the exciton confinement. It was found that a device with an MQB structure exhibited higher emission intensity as well as lower temperature sensitivity than the conventional MQW LEDs. The improvement of the quantum efficiency for the MQB device was attributed to the fact that the enhancement of the excitons was confined in the MQW region and inhibited the carrier overflow into the GaN region.

原文English
頁(從 - 到)2413-2417
頁數5
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
46
發行號4 B
DOIs
出版狀態Published - 2007 四月 24

指紋

Excitons
Semiconductor quantum wells
Light emitting diodes
light emitting diodes
quantum wells
excitons
Quantum efficiency
Photoluminescence
Temperature
augmentation
radiative recombination
quantum efficiency
photoluminescence
decay
temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

引用此文

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abstract = "The influences of multiquantum barriers (MQBs) on the carrier confinement and carrier recombination in blue InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) have been investigated in depth over a broad range of temperatures from 20 to 300K. Time-resolved photoluminescence (TRPL) temporal decay was measured to examine the dynamics of the carriers in both devices. The exciton recombination times of the blue emission are 2.81 and 4.11 ns for the QWs with MQB and GaN barriers, respectively. The former is a reasonable value for the radiative recombination in the structure with MQBs, and results from the enhancement of the exciton confinement. It was found that a device with an MQB structure exhibited higher emission intensity as well as lower temperature sensitivity than the conventional MQW LEDs. The improvement of the quantum efficiency for the MQB device was attributed to the fact that the enhancement of the excitons was confined in the MQW region and inhibited the carrier overflow into the GaN region.",
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Influences of multiquantum barriers on carrier recombination in InGaN/GaN multiple-quantum-well light-emitting diodes. / Nee, Tzer En; Wang, Jen Cheng; Shen, Hui Tang; Wu, Ya Fen; Shih, Yu Tai; Lu, Chien Lin.

於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 卷 46, 編號 4 B, 24.04.2007, p. 2413-2417.

研究成果: Article

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T1 - Influences of multiquantum barriers on carrier recombination in InGaN/GaN multiple-quantum-well light-emitting diodes

AU - Nee, Tzer En

AU - Wang, Jen Cheng

AU - Shen, Hui Tang

AU - Wu, Ya Fen

AU - Shih, Yu Tai

AU - Lu, Chien Lin

PY - 2007/4/24

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N2 - The influences of multiquantum barriers (MQBs) on the carrier confinement and carrier recombination in blue InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) have been investigated in depth over a broad range of temperatures from 20 to 300K. Time-resolved photoluminescence (TRPL) temporal decay was measured to examine the dynamics of the carriers in both devices. The exciton recombination times of the blue emission are 2.81 and 4.11 ns for the QWs with MQB and GaN barriers, respectively. The former is a reasonable value for the radiative recombination in the structure with MQBs, and results from the enhancement of the exciton confinement. It was found that a device with an MQB structure exhibited higher emission intensity as well as lower temperature sensitivity than the conventional MQW LEDs. The improvement of the quantum efficiency for the MQB device was attributed to the fact that the enhancement of the excitons was confined in the MQW region and inhibited the carrier overflow into the GaN region.

AB - The influences of multiquantum barriers (MQBs) on the carrier confinement and carrier recombination in blue InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) have been investigated in depth over a broad range of temperatures from 20 to 300K. Time-resolved photoluminescence (TRPL) temporal decay was measured to examine the dynamics of the carriers in both devices. The exciton recombination times of the blue emission are 2.81 and 4.11 ns for the QWs with MQB and GaN barriers, respectively. The former is a reasonable value for the radiative recombination in the structure with MQBs, and results from the enhancement of the exciton confinement. It was found that a device with an MQB structure exhibited higher emission intensity as well as lower temperature sensitivity than the conventional MQW LEDs. The improvement of the quantum efficiency for the MQB device was attributed to the fact that the enhancement of the excitons was confined in the MQW region and inhibited the carrier overflow into the GaN region.

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