Influence of polarization-matched AlGaInN barriers in blue InGaN light-emitting diodes

研究成果: Article

16 引文 斯高帕斯(Scopus)

摘要

The advantages of blue InGaN light-emitting diodes with low bandgap energy and polarization-matched AlGaInN barriers are demonstrated numerically. Simulation results show that, besides the common benefit of enhanced electron- hole spatial overlap in the quantum well from the polarization-matched condition, the lower bandgap energy barriers can have additional advantages of more uniform carrier distribution among quantum wells while maintaining sufficient electron confinement. The internal quantum efficiencies of all the polarization-matched structures under study exhibit less severe efficiency droop, which is presumably attributed to the suppression of Auger recombination.

原文English
頁(從 - 到)1574-1576
頁數3
期刊Optics Letters
37
發行號9
DOIs
出版狀態Published - 2012 五月 1

    指紋

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

引用此