Influence of indium doping on AlGaAs layers grown by molecular beam epitaxy

K. H. Chang, C. P. Lee, J. S. Wu, D. G. Liu, D. C. Liou

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

Influence of indium doping on the qualities of AlGaAs layers grown by molecular beam epitaxy has been studied. It was found that a proper amount of In doping can increase the photoluminescence intensity drastically by a factor greater than 10 indicating an improvement in the optical quality of AlGaAs epilayers. The improvement in the material quality is attributed to a higher surface migration rate of In atoms than those of Ga and Al atoms leading to a reduction of group III vacancies. However, too great a concentration of In atoms leads to effects that may degrade the film quality.

原文English
頁(從 - 到)1640-1642
頁數3
期刊Applied Physics Letters
57
發行號16
DOIs
出版狀態Published - 1990 十二月 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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