Influence of barrier structure on polarization effect in near ultraviolet light-emitting diodes

Yen Kuang Kuo, Fang Ming Chen, Jih Yuan Chang, Bo Ting Liou

研究成果: Conference contribution

摘要

Specific design of barrier in the AlGaN-based near ultraviolet (NUV) light-emitting diodes (LEDs) is investigated numerically. Simulation results reveal that NUV LEDs with the proposed p-Type/n-Type barrier can effectively reduce the polarization-induced electrostatic field, and thus enhance the spatial overlap of electron and hole wavefunctions in the wells.

原文English
主出版物標題2016 International Semiconductor Laser Conference, ISLC 2016
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9784885523069
出版狀態Published - 2016 十二月 2
事件2016 International Semiconductor Laser Conference, ISLC 2016 - Kobe, Japan
持續時間: 2016 九月 122016 九月 15

出版系列

名字Conference Digest - IEEE International Semiconductor Laser Conference
ISSN(列印)0899-9406

Other

Other2016 International Semiconductor Laser Conference, ISLC 2016
國家Japan
城市Kobe
期間16-09-1216-09-15

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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