@inproceedings{76c2cc996d85476c86231d6b118fc297,
title = "Influence of barrier structure on polarization effect in near ultraviolet light-emitting diodes",
abstract = "Specific design of barrier in the AlGaN-based near ultraviolet (NUV) light-emitting diodes (LEDs) is investigated numerically. Simulation results reveal that NUV LEDs with the proposed p-Type/n-Type barrier can effectively reduce the polarization-induced electrostatic field, and thus enhance the spatial overlap of electron and hole wavefunctions in the wells.",
author = "Kuo, {Yen Kuang} and Chen, {Fang Ming} and Chang, {Jih Yuan} and Liou, {Bo Ting}",
year = "2016",
month = dec,
day = "2",
language = "English",
series = "Conference Digest - IEEE International Semiconductor Laser Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2016 International Semiconductor Laser Conference, ISLC 2016",
address = "United States",
note = "2016 International Semiconductor Laser Conference, ISLC 2016 ; Conference date: 12-09-2016 Through 15-09-2016",
}