Induced changes in surface band bending of n -type and p -type AlGaN by oxidation and wet chemical treatments

Yow Jon Lin, Yow Lin Chu, Wen Xiang Lin, Feng Tso Chien, Chi Sen Lee

研究成果: Article

10 引文 斯高帕斯(Scopus)

摘要

The surface chemistry and electrical properties of p -type and n -type AlGaN surfaces were studied via x-ray photoelectron spectroscopy before and after oxidation and wet chemical treatments. Shifts in the surface Fermi level were measured with the change in onset of the valence-band spectra. Oxidation and HF and (N H4) 2 Sx treatments on p -type AlGaN (n -type AlGaN) led to an increase (the reduction) in the surface band bending due to more N vacancies and N vacancies being occupied by S (i.e., donorlike states) than Al vacancies and Ga vacancies (i.e., acceptorlike states) near the p -type AlGaN (n -type AlGaN) surface region. The changes in surface chemistry indicate that oxidation and wet chemical treatments alter the surface state density through the formation of more donorlike states.

原文English
文章編號073702
期刊Journal of Applied Physics
99
發行號7
DOIs
出版狀態Published - 2006 四月 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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