Incorporation of black phosphorus into poly(3-hexylthiophene)/n-type Si devices resulting improvement in rectifying and optoelectronic performances

Hong Zhi Lin, Yow Jon Lin

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

The effect of the incorporation of black phosphorus (BP) into poly(3-hexylthiophene) (P3HT) on the electrical conduction mechanisms in the rectifying current-voltage characteristics of P3HT/n-type Si devices was investigated. It is shown that the rectifying behavior is affected by the bulk effects of the P3HT layer and the forward-voltage current is limited by thermionic emission and space charge limited current mechanisms. The incorporation of BP into P3HT leads to a combined effect of a significant increase in the hole mobility and the interfacial modification of P3HT/n-type Si, resulting improvement in the rectifying and optoelectronic performances of P3HT/n-type Si devices.

原文English
頁(從 - 到)538-542
頁數5
期刊Synthetic Metals
220
DOIs
出版狀態Published - 2016 十月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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