Improvement of Ni nonalloyed ohmic contacts on p-GaN films by changing thickness of p-InGaN capping layers

Yow Lin Chu, Yow-Jon Lin, Cheng Hsiang Ho, Wei-Li Chen

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

The influence of the thickness of p-type InGaN (p-InGaN) capping layers grown on p-type GaN (p-GaN) on the electrical properties of Ni contacts on p-GaN was investigated in this study. Experiments and simulations indicated that a thicker pInGaN capping layer grown on p-GaN led to the formation of a higher concentration of a two-dimensional hole gas (2DHG) at the interfaces. In addition, owing to a low barrier at the interfaces, holes can be easily injected into the p-GaN layer through recessed channels and a 2DHG channel, resulting in the formation of nonalloyed ohmic contacts with a low specific contact resistance of 1.7 × 10-5 Ωcm2.

原文English
頁(從 - 到)6884-6887
頁數4
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
45
發行號9 A
DOIs
出版狀態Published - 2006 九月 7

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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