Improvement in piezoelectric effect of violet InGaN laser diodes

Sheng Horng Yen; Yen-Kuang Kuo

doi:10.1016/j.optcom.2008.05.034

Improvement in piezoelectric effect of violet InGaN laser diodes

Sheng Horng Yen, Yen-Kuang Kuo

物理學系

研究成果: Article › 同行評審

13 引文斯高帕斯（Scopus）

摘要

The laser performance of violet InGaN laser diodes is investigated numerically. The polarization-dependent properties, including overlap of electron and hole wavefunctions, threshold current, and slope efficiency, are studied through the use of step-like quantum well structure. Furthermore, the electron and hole wavefunctions, band diagrams, and emission wavelength are compared and analyzed. The simulation results show that the lowest threshold current and the highest slope efficiency are obtained when the step-like quantum well structure is designed as In_0.12Ga_0.88N (2.5 nm)-In_0.18Ga_0.82N (1 nm) or In_0.18Ga_0.82N (2.5 nm)-In_0.12Ga_0.88N (1 nm) for violet laser diodes due to sufficiently enhanced overlap of electron and hole wavefunctions.

原文	English
頁（從 - 到）	4735-4740
頁數	6
期刊	Optics Communications
卷	281
發行號	18
DOIs	https://doi.org/10.1016/j.optcom.2008.05.034
出版狀態	Published - 2008 九月 15

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Physical and Theoretical Chemistry
Electrical and Electronic Engineering

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10.1016/j.optcom.2008.05.034

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abstract = "The laser performance of violet InGaN laser diodes is investigated numerically. The polarization-dependent properties, including overlap of electron and hole wavefunctions, threshold current, and slope efficiency, are studied through the use of step-like quantum well structure. Furthermore, the electron and hole wavefunctions, band diagrams, and emission wavelength are compared and analyzed. The simulation results show that the lowest threshold current and the highest slope efficiency are obtained when the step-like quantum well structure is designed as In0.12Ga0.88N (2.5 nm)-In0.18Ga0.82N (1 nm) or In0.18Ga0.82N (2.5 nm)-In0.12Ga0.88N (1 nm) for violet laser diodes due to sufficiently enhanced overlap of electron and hole wavefunctions.",

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AB - The laser performance of violet InGaN laser diodes is investigated numerically. The polarization-dependent properties, including overlap of electron and hole wavefunctions, threshold current, and slope efficiency, are studied through the use of step-like quantum well structure. Furthermore, the electron and hole wavefunctions, band diagrams, and emission wavelength are compared and analyzed. The simulation results show that the lowest threshold current and the highest slope efficiency are obtained when the step-like quantum well structure is designed as In0.12Ga0.88N (2.5 nm)-In0.18Ga0.82N (1 nm) or In0.18Ga0.82N (2.5 nm)-In0.12Ga0.88N (1 nm) for violet laser diodes due to sufficiently enhanced overlap of electron and hole wavefunctions.

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