Improvement in electron overflow of near-ultraviolet InGaN LEDs by specific design on last barrier

Yen Kuang Kuo, Ya Hsuan Shih, Miao Chan Tsai, Jih Yuan Chang

研究成果: Article同行評審

33 引文 斯高帕斯(Scopus)

摘要

Specific designs on the last barrier of near-ultraviolet InGaN light-emitting diodes are investigated numerically in order to diminish the electron leakage current without sacrificing the injection efficiency of holes. Due to the reduction of electron leakage current, the recombination of electrons and holes in the p-layers is decreased and, thus, more holes can be injected into the active region. The simulation results show that the optical performance and internal quantum efficiency are markedly improved when the last GaN barrier near the p-layers is partially replaced by In01 Ga0.99N layer and intentionally p-doped.

原文English
文章編號5995143
頁(從 - 到)1630-1632
頁數3
期刊IEEE Photonics Technology Letters
23
發行號21
DOIs
出版狀態Published - 2011 十月 28

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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