Improved quantum efficiency in green InGaN light-emitting diodes with InGaN barriers

Jih Yuan Chang, Yi An Chang, Fang Ming Chen, Yih Ting Kuo, Yen Kuang Kuo

研究成果: Article同行評審

12 引文 斯高帕斯(Scopus)

摘要

The characteristics of green InGaN light-emitting diodes (LEDs) are investigated. The results obtained numerically show that the optical performance of green InGaN LEDs is deteriorated severely by Auger recombination, which becomes more severe at high current injection levels. Through employing In 0.2 Ga0.8 N as barrier material, the radiative recombination efficiency is enhanced and the Auger recombination is suppressed efficiently because of the better electron-hole spatial overlap and the more uniform carrier distribution in the active region.

原文English
文章編號6353514
頁(從 - 到)55-58
頁數4
期刊IEEE Photonics Technology Letters
25
發行號1
DOIs
出版狀態Published - 2013 一月 7

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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