Improved quantum efficiency in green InGaN light-emitting diodes with InGaN barriers

Jih Yuan Chang; Yi An Chang; Fang Ming Chen; Yih Ting Kuo; Yen Kuang Kuo

doi:10.1109/LPT.2012.2227700

Improved quantum efficiency in green InGaN light-emitting diodes with InGaN barriers

Jih Yuan Chang, Yi An Chang, Fang Ming Chen, Yih Ting Kuo, Yen Kuang Kuo

研究成果: Article › 同行評審

12 引文斯高帕斯（Scopus）

摘要

The characteristics of green InGaN light-emitting diodes (LEDs) are investigated. The results obtained numerically show that the optical performance of green InGaN LEDs is deteriorated severely by Auger recombination, which becomes more severe at high current injection levels. Through employing In _0.2 Ga_0.8 N as barrier material, the radiative recombination efficiency is enhanced and the Auger recombination is suppressed efficiently because of the better electron-hole spatial overlap and the more uniform carrier distribution in the active region.

原文	English
文章編號	6353514
頁（從 - 到）	55-58
頁數	4
期刊	IEEE Photonics Technology Letters
卷	25
發行號	1
DOIs	https://doi.org/10.1109/LPT.2012.2227700
出版狀態	Published - 2013 一月 7

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2012.2227700

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