Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate

Chia Hua Chan, Chia Hung Hou, Shao Ze Tseng, Tsing Jen Chen, Hung Ta Chien, Fu Li Hsiao, Chien Chieh Lee, Yen Ling Tsai, Chii Chang Chen

研究成果: Article同行評審

58 引文 斯高帕斯(Scopus)

摘要

This letter describes the improved output power of GaN-based light-emitting diodes (LEDs) formed on a nanopatterned sapphire substrate (NPSS) prepared through etching with a self-assembled monolayer of 750-nm-diameter SiO 2 nanospheres used as the mask. The output power of NPSS LEDs was 76% greater than that of LEDs on a flat sapphire substrate. Three-dimensional finite-difference time-domain calculation predicted a 40% enhancement in light extraction efficiency of NPSS LEDs. In addition, the reduction of full widths at half maximum in the ω -scan rocking curves for the (0 0 2) and (1 0 2) planes of GaN on NPSS suggested improved crystal quality.

原文English
文章編號011110
期刊Applied Physics Letters
95
發行號1
DOIs
出版狀態Published - 2009 七月 20

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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