Improved AlGaAs/GaAs double-barrier resonant tunneling structures using two-dimensional source electrons

Jenq-Shinn Wu, C. P. Lee, C. Y. Chang, K. H. Chang, D. G. Liu, D. C. Liou

研究成果: Article

6 引文 斯高帕斯(Scopus)

摘要

We report the enhancement of peak-to-valley current ratios (PVCRs) of double-barrier resonant tunneling structures (DBRTSs) based on the AlGaAs/GaAs material system. The PVCRs as high as 25.4 and 18 have been obtained at 77 K for superlattice and alloy barrier structures with 0.2-μm undoped electrodes, respectively. These are the largest PVCRs to date for AlGaAs/GaAs DBRTSs. The large band bending across the undoped electrodes causes size quantization of the accumulation layer, resulting in better resonant tunneling characteristics.

原文English
頁(從 - 到)1122-1123
頁數2
期刊Journal of Applied Physics
69
發行號2
DOIs
出版狀態Published - 1991 十二月 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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