Hybrid stacking structure of electroplated copper onto graphene for future interconnect applications

Ya Wen Su, Cen Shawn Wu, Chih Hua Liu, Hung Yi Lin, Chii Dong Chen

研究成果: Article

1 引文 斯高帕斯(Scopus)

摘要

We show the feasibility of copper electroplating using graphene as a seed layer. Thermal annealing of the as-plated copper-graphene hybrid system promotes permeation of copper into graphene, forming an intermixing layer with enlarged lattice constant. It is shown that this intermixing layer blocks the diffusion of copper into the bottom SiO2/Si substrate at temperatures up to 900°C. The electroplating process is comparable with current semiconductor fabrication technology. This hybrid system can serve as interconnect in the integrated circuits.

原文English
文章編號093105
期刊Applied Physics Letters
107
發行號9
DOIs
出版狀態Published - 2015 八月 31

    指紋

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

引用此