Hole-transport barrier and band bending at the indium tin oxide/polymer/ p-AlGaN interface

研究成果: Article

2 引文 斯高帕斯(Scopus)

摘要

Nonalloyed Ohmic contacts on p-AlGaN were achieved using a thin polymer film [i.e., poly(3,4-ethylenedioxythiophene) (PEDOT) doped with poly(4-styrenesulfonate)] as an interlayer for the electronic modification of indium tin oxide/ p-AlGaN contacts. The electronic properties were investigated by current-voltage measurements and x-ray photoelectron spectroscopy (XPS). According to XPS measurements, the authors found a slight reduction in the surface band bending of p-AlGaN following PEDOT coating and the disappearance of the barrier for hole transport at indium tin oxide/PEDOT/ p-AlGaN interfaces.

原文English
文章編號152121
期刊Applied Physics Letters
89
發行號15
DOIs
出版狀態Published - 2006 十月 20

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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