High-temperature carrier density and mobility enhancements in AlGaN/GaN HEMT using AlN spacer layer

Tsung Shine Ko, Der Yuh Lin, Chia Feng Lin, Che Wei Chang, Jin Cheng Zhang, Shang Ju Tu

研究成果: Article

5 引文 (Scopus)

摘要

In this paper, we experimentally studied the effect of AlN spacer layer on optical and electrical properties of AlGaN/GaN high electric mobility transistors (HEMTs) grown by metal organic chemical vapor deposition method. For AlGaN layer in HEMT structure, the Al composition of the sample was determined using x-ray diffraction and photoluminescence. Electrolyte electro-reflectance (EER) measurement not only confirmed the aluminum composition of AlGaN layer, but also determined the electric field strength on the AlGaN layer through the Franz-Keldysh oscillation phenomenon. This result indicated that the electric field on the AlGaN layer could be improved from 430 to 621 kV/cm when AlN spacer layer was inserted in HEMT structure, which increased the concentration of two dimensional electron gas (2DEG) and improve the mobility. The temperature dependent Hall results show that both the mobility and the carrier concentration of 2DEG would decrease abruptly causing HEMT loss of function due to phonon scattering and carrier thermal escape when temperature increases above a specific value. Meanwhile, our study also demonstrates using AlN spacer layer could be beneficial to allow the mobility and carrier density of 2DEG sustaining at high temperature region.

原文English
頁(從 - 到)175-179
頁數5
期刊Journal of Crystal Growth
464
DOIs
出版狀態Published - 2017 四月 15

指紋

Two dimensional electron gas
Carrier mobility
carrier mobility
spacers
Carrier concentration
Transistors
transistors
augmentation
Electric fields
Temperature
Phonon scattering
Reflectometers
Organic chemicals
Organic Chemicals
Chemical analysis
Chemical vapor deposition
Photoluminescence
Electric properties
Aluminum
Optical properties

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

引用此文

Ko, Tsung Shine ; Lin, Der Yuh ; Lin, Chia Feng ; Chang, Che Wei ; Zhang, Jin Cheng ; Tu, Shang Ju. / High-temperature carrier density and mobility enhancements in AlGaN/GaN HEMT using AlN spacer layer. 於: Journal of Crystal Growth. 2017 ; 卷 464. 頁 175-179.
@article{c4012421b5df44a39e3c236656d89ed3,
title = "High-temperature carrier density and mobility enhancements in AlGaN/GaN HEMT using AlN spacer layer",
abstract = "In this paper, we experimentally studied the effect of AlN spacer layer on optical and electrical properties of AlGaN/GaN high electric mobility transistors (HEMTs) grown by metal organic chemical vapor deposition method. For AlGaN layer in HEMT structure, the Al composition of the sample was determined using x-ray diffraction and photoluminescence. Electrolyte electro-reflectance (EER) measurement not only confirmed the aluminum composition of AlGaN layer, but also determined the electric field strength on the AlGaN layer through the Franz-Keldysh oscillation phenomenon. This result indicated that the electric field on the AlGaN layer could be improved from 430 to 621 kV/cm when AlN spacer layer was inserted in HEMT structure, which increased the concentration of two dimensional electron gas (2DEG) and improve the mobility. The temperature dependent Hall results show that both the mobility and the carrier concentration of 2DEG would decrease abruptly causing HEMT loss of function due to phonon scattering and carrier thermal escape when temperature increases above a specific value. Meanwhile, our study also demonstrates using AlN spacer layer could be beneficial to allow the mobility and carrier density of 2DEG sustaining at high temperature region.",
author = "Ko, {Tsung Shine} and Lin, {Der Yuh} and Lin, {Chia Feng} and Chang, {Che Wei} and Zhang, {Jin Cheng} and Tu, {Shang Ju}",
year = "2017",
month = "4",
day = "15",
doi = "10.1016/j.jcrysgro.2016.12.023",
language = "English",
volume = "464",
pages = "175--179",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

High-temperature carrier density and mobility enhancements in AlGaN/GaN HEMT using AlN spacer layer. / Ko, Tsung Shine; Lin, Der Yuh; Lin, Chia Feng; Chang, Che Wei; Zhang, Jin Cheng; Tu, Shang Ju.

於: Journal of Crystal Growth, 卷 464, 15.04.2017, p. 175-179.

研究成果: Article

TY - JOUR

T1 - High-temperature carrier density and mobility enhancements in AlGaN/GaN HEMT using AlN spacer layer

AU - Ko, Tsung Shine

AU - Lin, Der Yuh

AU - Lin, Chia Feng

AU - Chang, Che Wei

AU - Zhang, Jin Cheng

AU - Tu, Shang Ju

PY - 2017/4/15

Y1 - 2017/4/15

N2 - In this paper, we experimentally studied the effect of AlN spacer layer on optical and electrical properties of AlGaN/GaN high electric mobility transistors (HEMTs) grown by metal organic chemical vapor deposition method. For AlGaN layer in HEMT structure, the Al composition of the sample was determined using x-ray diffraction and photoluminescence. Electrolyte electro-reflectance (EER) measurement not only confirmed the aluminum composition of AlGaN layer, but also determined the electric field strength on the AlGaN layer through the Franz-Keldysh oscillation phenomenon. This result indicated that the electric field on the AlGaN layer could be improved from 430 to 621 kV/cm when AlN spacer layer was inserted in HEMT structure, which increased the concentration of two dimensional electron gas (2DEG) and improve the mobility. The temperature dependent Hall results show that both the mobility and the carrier concentration of 2DEG would decrease abruptly causing HEMT loss of function due to phonon scattering and carrier thermal escape when temperature increases above a specific value. Meanwhile, our study also demonstrates using AlN spacer layer could be beneficial to allow the mobility and carrier density of 2DEG sustaining at high temperature region.

AB - In this paper, we experimentally studied the effect of AlN spacer layer on optical and electrical properties of AlGaN/GaN high electric mobility transistors (HEMTs) grown by metal organic chemical vapor deposition method. For AlGaN layer in HEMT structure, the Al composition of the sample was determined using x-ray diffraction and photoluminescence. Electrolyte electro-reflectance (EER) measurement not only confirmed the aluminum composition of AlGaN layer, but also determined the electric field strength on the AlGaN layer through the Franz-Keldysh oscillation phenomenon. This result indicated that the electric field on the AlGaN layer could be improved from 430 to 621 kV/cm when AlN spacer layer was inserted in HEMT structure, which increased the concentration of two dimensional electron gas (2DEG) and improve the mobility. The temperature dependent Hall results show that both the mobility and the carrier concentration of 2DEG would decrease abruptly causing HEMT loss of function due to phonon scattering and carrier thermal escape when temperature increases above a specific value. Meanwhile, our study also demonstrates using AlN spacer layer could be beneficial to allow the mobility and carrier density of 2DEG sustaining at high temperature region.

UR - http://www.scopus.com/inward/record.url?scp=85027940230&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85027940230&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2016.12.023

DO - 10.1016/j.jcrysgro.2016.12.023

M3 - Article

AN - SCOPUS:85027940230

VL - 464

SP - 175

EP - 179

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -