High reflectance of reflective-type attenuated-phase-shifting masks for extreme ultraviolet lithography with high inspection contrast in deep ultraviolet regimes

H. L. Chen, H. C. Cheng, T. S. Ko, F. H. Ko, T. C. Chu

研究成果: Article同行評審

12 引文 斯高帕斯(Scopus)

摘要

Phase-shifting masks are a vital resolution enhance technique that will be used in extreme ultraviolet (EUV) lithography beyond the 20 nm node. In this article, we demonstrate a structure for a reflective-type attenuated phase-shifting mask, which is based on a Fabry-Perot structure with common materials in EUV masks. The mask structure not only performs 180° phase shift with high reflectance at EUV wavelength, but also has high inspection contrast at deep ultraviolet (DUV) wavelength. The top layer of mask structures exhibits good conductivity, which can alleviate the charging effect during electron-beam patterning. The reflectance ratio of the absorber stack could be tuned from 32.6% (TaN/SiO2/Mo) to 4.4% (TaN/SiO2/TaN) by choosing different bottom layers and thickness. The inspection contrast could be raised to 99% with large thickness-control tolerance.

原文English
頁(從 - 到)3049-3052
頁數4
期刊Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
22
發行號6
DOIs
出版狀態Published - 2004 十一月 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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