High quality AlGaAs layers grown by molecular beam epitaxy at low temperatures

K. H. Chang; Jenq-Shinn Wu; D. G. Liu; D. C. Liou; C. P. Lee

doi:10.1007/BF00701087

High quality AlGaAs layers grown by molecular beam epitaxy at low temperatures

K. H. Chang, Jenq-Shinn Wu, D. G. Liu, D. C. Liou, C. P. Lee

電子工程學系

研究成果: Article

1 引文斯高帕斯（Scopus）

摘要

Low-temperature (∼600 °C) molecular beam epitaxy (MBE) growth of AlGaAs has been studied. It was found that the quality of AlGaAs grown at low temperatures can be as good as that grown at high temperatures (>700 °C) if the source materials and the growth chamber are very clean. The threshold currents of Al_0.6Ga_0.4As/Al_0.15Ga_0.85As/Al_0.6Ga_0.4As double heterostructure (DH) lasers grown at low temperatures and high temperatures are almost the same. The material quality can be further improved with a proper amount of indium doping. Photoluminescence (PL) linewidths of 3.1 meV and 1.7 meV have been measured for Indoped Al_0.42Ga_0.58As and Al_0.18Ga_0.82As at 4 K, respectively. They are the narrowest linewidths for the MBE-grown AlGaAs with comparable Al contents at any growth temperature. With a proper amount of In doping, double-barrier resonant tunnelling diodes have also shown improved peak-to-valley current ratios.

原文	English
頁（從 - 到）	11-15
頁數	5
期刊	Journal of Materials Science: Materials in Electronics
卷	3
發行號	1
DOIs	https://doi.org/10.1007/BF00701087
出版狀態	Published - 1992 三月 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1007/BF00701087

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引用此

Chang, K. H., Wu, J-S., Liu, D. G., Liou, D. C., & Lee, C. P. (1992). High quality AlGaAs layers grown by molecular beam epitaxy at low temperatures. Journal of Materials Science: Materials in Electronics, 3(1), 11-15. https://doi.org/10.1007/BF00701087

@article{2fcb9151e640418d9b86581d9fafa388,

title = "High quality AlGaAs layers grown by molecular beam epitaxy at low temperatures",

abstract = "Low-temperature (∼600 °C) molecular beam epitaxy (MBE) growth of AlGaAs has been studied. It was found that the quality of AlGaAs grown at low temperatures can be as good as that grown at high temperatures (>700 °C) if the source materials and the growth chamber are very clean. The threshold currents of Al0.6Ga0.4As/Al0.15Ga0.85As/Al0.6Ga0.4As double heterostructure (DH) lasers grown at low temperatures and high temperatures are almost the same. The material quality can be further improved with a proper amount of indium doping. Photoluminescence (PL) linewidths of 3.1 meV and 1.7 meV have been measured for Indoped Al0.42Ga0.58As and Al0.18Ga0.82As at 4 K, respectively. They are the narrowest linewidths for the MBE-grown AlGaAs with comparable Al contents at any growth temperature. With a proper amount of In doping, double-barrier resonant tunnelling diodes have also shown improved peak-to-valley current ratios.",

author = "Chang, {K. H.} and Jenq-Shinn Wu and Liu, {D. G.} and Liou, {D. C.} and Lee, {C. P.}",

year = "1992",

month = mar,

day = "1",

doi = "10.1007/BF00701087",

language = "English",

volume = "3",

pages = "11--15",

journal = "Journal of Materials Science: Materials in Electronics",

issn = "0957-4522",

publisher = "Springer New York",

number = "1",

}

TY - JOUR

T1 - High quality AlGaAs layers grown by molecular beam epitaxy at low temperatures

AU - Chang, K. H.

AU - Wu, Jenq-Shinn

AU - Liu, D. G.

AU - Liou, D. C.

AU - Lee, C. P.

PY - 1992/3/1

Y1 - 1992/3/1

N2 - Low-temperature (∼600 °C) molecular beam epitaxy (MBE) growth of AlGaAs has been studied. It was found that the quality of AlGaAs grown at low temperatures can be as good as that grown at high temperatures (>700 °C) if the source materials and the growth chamber are very clean. The threshold currents of Al0.6Ga0.4As/Al0.15Ga0.85As/Al0.6Ga0.4As double heterostructure (DH) lasers grown at low temperatures and high temperatures are almost the same. The material quality can be further improved with a proper amount of indium doping. Photoluminescence (PL) linewidths of 3.1 meV and 1.7 meV have been measured for Indoped Al0.42Ga0.58As and Al0.18Ga0.82As at 4 K, respectively. They are the narrowest linewidths for the MBE-grown AlGaAs with comparable Al contents at any growth temperature. With a proper amount of In doping, double-barrier resonant tunnelling diodes have also shown improved peak-to-valley current ratios.

AB - Low-temperature (∼600 °C) molecular beam epitaxy (MBE) growth of AlGaAs has been studied. It was found that the quality of AlGaAs grown at low temperatures can be as good as that grown at high temperatures (>700 °C) if the source materials and the growth chamber are very clean. The threshold currents of Al0.6Ga0.4As/Al0.15Ga0.85As/Al0.6Ga0.4As double heterostructure (DH) lasers grown at low temperatures and high temperatures are almost the same. The material quality can be further improved with a proper amount of indium doping. Photoluminescence (PL) linewidths of 3.1 meV and 1.7 meV have been measured for Indoped Al0.42Ga0.58As and Al0.18Ga0.82As at 4 K, respectively. They are the narrowest linewidths for the MBE-grown AlGaAs with comparable Al contents at any growth temperature. With a proper amount of In doping, double-barrier resonant tunnelling diodes have also shown improved peak-to-valley current ratios.

UR - http://www.scopus.com/inward/record.url?scp=34249839775&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34249839775&partnerID=8YFLogxK

U2 - 10.1007/BF00701087

DO - 10.1007/BF00701087

M3 - Article

AN - SCOPUS:34249839775

VL - 3

SP - 11

EP - 15

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

SN - 0957-4522

IS - 1

ER -