High performances of InGaP/GaAs MSM photodetectors using Cu/Au Schottky contact

Chang Da Tsai; Yow-Jon Lin; Day Shan Liu; Ching Ting Lee

High performances of InGaP/GaAs MSM photodetectors using Cu/Au Schottky contact

Chang Da Tsai, Yow-Jon Lin, Day Shan Liu, Ching Ting Lee

光電科技研究所

研究成果: Conference article › 同行評審

摘要

We present the high performance of InGaP/GaAs metal-semiconductor-metal photodetectors (MSM-PDs) using copper as the interdigital Schottky electrodes. The devices exhibit ultra-low dark current (70 pA at bias of 10 V) and ultra-fast pulse response (over 9 GHz). The notable dark current characteristic and the absence of trap-induced gain are accredited to the superior properties of InGaP capping layer. The superior performances of InGaP/GaAs MSM-PDs make it promising for data communication.

原文	English
頁（從 - 到）	724-731
頁數	8
期刊	Proceedings of SPIE - The International Society for Optical Engineering
卷	4078
出版狀態	Published - 2000 一月 1
事件	Optoelectronic Materials and Devices II - Taipei, Taiwan 持續時間: 2000 七月 26 → 2000 七月 28

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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title = "High performances of InGaP/GaAs MSM photodetectors using Cu/Au Schottky contact",

abstract = "We present the high performance of InGaP/GaAs metal-semiconductor-metal photodetectors (MSM-PDs) using copper as the interdigital Schottky electrodes. The devices exhibit ultra-low dark current (70 pA at bias of 10 V) and ultra-fast pulse response (over 9 GHz). The notable dark current characteristic and the absence of trap-induced gain are accredited to the superior properties of InGaP capping layer. The superior performances of InGaP/GaAs MSM-PDs make it promising for data communication.",

author = "Tsai, {Chang Da} and Yow-Jon Lin and Liu, {Day Shan} and Lee, {Ching Ting}",

year = "2000",

month = jan,

day = "1",

language = "English",

volume = "4078",

pages = "724--731",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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note = "Optoelectronic Materials and Devices II ; Conference date: 26-07-2000 Through 28-07-2000",

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TY - JOUR

T1 - High performances of InGaP/GaAs MSM photodetectors using Cu/Au Schottky contact

AU - Tsai, Chang Da

AU - Lin, Yow-Jon

AU - Liu, Day Shan

AU - Lee, Ching Ting

PY - 2000/1/1

Y1 - 2000/1/1

N2 - We present the high performance of InGaP/GaAs metal-semiconductor-metal photodetectors (MSM-PDs) using copper as the interdigital Schottky electrodes. The devices exhibit ultra-low dark current (70 pA at bias of 10 V) and ultra-fast pulse response (over 9 GHz). The notable dark current characteristic and the absence of trap-induced gain are accredited to the superior properties of InGaP capping layer. The superior performances of InGaP/GaAs MSM-PDs make it promising for data communication.

AB - We present the high performance of InGaP/GaAs metal-semiconductor-metal photodetectors (MSM-PDs) using copper as the interdigital Schottky electrodes. The devices exhibit ultra-low dark current (70 pA at bias of 10 V) and ultra-fast pulse response (over 9 GHz). The notable dark current characteristic and the absence of trap-induced gain are accredited to the superior properties of InGaP capping layer. The superior performances of InGaP/GaAs MSM-PDs make it promising for data communication.

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M3 - Conference article

AN - SCOPUS:0033699125

VL - 4078

SP - 724

EP - 731

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

SN - 0277-786X

T2 - Optoelectronic Materials and Devices II

Y2 - 26 July 2000 through 28 July 2000

ER -