High field effect of a new tip type CMOS MEMS gas sensor

研究成果: Conference contribution

摘要

A new proposed gas sensor was built to achieve high field with the tip type electrode in a standard CMOS process. The increase of electric field will enhance the chemical reaction rate dramatically. Beyond the conventional chemical sensors with heating power to achieve a high sensitivity, we proposed a total new sensing mechanism with the short distance of electrodes which includes the different distance between electrodes with even higher sensitivity than before without any heating. To form the sensing material SnO2, we first formed the material Fe3O4 with 0.86g FeCl 2 + 1.4g FeCl3 using in 40ml H2O at 80°C, and SnO2 solution is mixed at SnO2:Fe3O 4 = 3:1. After the micromachining of CMOS gas sensor, a spin-on of sensing material and the subsequent process of wire-bond were performed. The samples with several electric fields were under test and verified inside a CO gas chamber with the tip type electrode. With careful investigation of measurement results, it shows the proposed configuration with tip electrode sensor reaches the higher sensitivity with the higher electric field, while the normalized sensitivity rises from 107.6 %/ppm to 388 %/ppm under the applied electric field from 1.67 V/μm to 8.33 V/μm. Experimental measurement shows the research is available for CO sensor with high sensitivity under high electric field.

原文English
主出版物標題IEEE SENSORS 2012 - Proceedings
DOIs
出版狀態Published - 2012 十二月 1
事件11th IEEE SENSORS 2012 Conference - Taipei, Taiwan
持續時間: 2012 十月 282012 十月 31

出版系列

名字Proceedings of IEEE Sensors

Other

Other11th IEEE SENSORS 2012 Conference
國家Taiwan
城市Taipei
期間12-10-2812-10-31

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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