High-efficiency deep-ultraviolet light-emitting diodes with efficient carrier confinement and high light extraction

Jih Yuan Chang, Bo Ting Liou, Man Fang Huang, Ya Hsuan Shih, Fang Ming Chen, Yen Kuang Kuo

研究成果: Article

5 引文 斯高帕斯(Scopus)

摘要

In deep-ultraviolet (DUV) light-emitting diodes (LEDs), it is difficult to obtain both efficient carrier confinement and high light extraction, which are quite sensitive to optical polarization and other physical parameters. In this paper, characteristics of DUV LEDs with various n-AlGaN layers and quantum barriers (QBs), and various widths of quantum wells (QWs) are investigated. Specifically, the capability of carrier confinement and properties of optical polarization are analyzed in detail. The simulation results show that LED structure with Al 0.64 Ga 0.36 N QBs, n-Al 0.7 Ga 0.3 N layer, and 4-nm-thick QWs, which has a peak emission wavelength of 284.5 nm at 60 mA, exhibits high internal quantum efficiency of 25% and high degree of optical polarization of 0.874.

原文English
文章編號8598952
頁(從 - 到)976-982
頁數7
期刊IEEE Transactions on Electron Devices
66
發行號2
DOIs
出版狀態Published - 2019 二月

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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