Growth of InN by MBE

W. L. Chen, R. L. Gunshor, Jung Han, K. Higashimine, N. Otsuka

研究成果: Conference article同行評審

1 引文 斯高帕斯(Scopus)

摘要

A series of experiments were performed to explore the growth of InN by Molecular Beam Epitaxy (MBE). The growth conditions were optimized based on the study of RHEED during growth and InN dissociation experiments. Characterization of the InN thin films were performed by various techniques such as TEM and XRD.

原文English
頁(從 - 到)W3.30.1 - W3.30.6
期刊Materials Research Society Symposium - Proceedings
595
出版狀態Published - 2000 一月 1
事件The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' - Boston, MA, USA
持續時間: 1999 十一月 281999 十二月 3

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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