Growth of InN by MBE

W. L. Chen, R. L. Gunshor, Jung Han, K. Higashimine, N. Otsuka

研究成果: Article

摘要

A series of experiments were performed to explore the growth of InN by Molecular Beam Epitaxy (MBE). The growth conditions were optimized based on the study of RHEED during growth and InN dissociation experiments. Characterization of the InN thin films were performed by various techniques such as TEM and XRD.

原文English
期刊MRS Internet Journal of Nitride Semiconductor Research
5
發行號SUPPL. 1
出版狀態Published - 2000 十二月 1

    指紋

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

引用此

Chen, W. L., Gunshor, R. L., Han, J., Higashimine, K., & Otsuka, N. (2000). Growth of InN by MBE. MRS Internet Journal of Nitride Semiconductor Research, 5(SUPPL. 1).