The growth of InGaP, InGaAs and InGaAsP epilayers lattice matched to GaAs using the low pressure organometallic vapor phase epitaxy (LP-OMVPE) system was investigated. For the application of erbium-doped fiber amplifiers (EDFAs), the emission wavelength and far-field pattern of the pump laser were designed. The optical and electrical performances of the resultant pump laser were measured.
|頁（從 - 到）||6384-6390|
|期刊||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版狀態||Published - 2001 十一月|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)