Fabrication of ultra-small dimension Si1-xGex wires in Si using pulsed laser induced epitaxy

C. Deng, Jong-Ching Wu, J. Rack, T. W. Sigmon, M. N. Wybourne

研究成果: Paper同行評審

摘要

Direct writing of sub-micron Si1-xGex wires in Si is demonstrated for the first time using Pulsed Laser Induced Epitaxy (PLIE) and a photolithographic lift-off technique. The wire structures are analyzed by Secondary Electron Microscope (SEM), Atomic Force Microscope (AFM), Auger Electron Spectroscopy (AES), and cross-sectional Transmission Electron Microscopy (TEM). Side diffusion effects observed for the Ge are discussed. Potential applications of the wire structure include base formation in a lateral Si1-xGex bipolar transistor and direct formation of SiGe/Si quantum wire structures in a silicon chip.

原文English
頁面444-446
頁數3
出版狀態Published - 1995 十二月 1
事件Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China
持續時間: 1995 十月 241995 十月 28

Other

OtherProceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology
城市Beijing, China
期間95-10-2495-10-28

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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