Fabrication of silicon and germanium nanostructures by combination of hydrogen plasma dry etching and VLS growth mechanism

Ming Che Yang, Jiann Shieh, Tsung Shine Ko, Hsuen Li Chen, Tieh Chi Chu

研究成果: Conference contribution

摘要

Aligned silicon nanowires and germanium nanostructures were fabricated by combination of hydrogen plasma dry etching and vapor-liquid-solid (VLS) growth mechanism. The morphology of nanowires was transferred into nanotips beyond 10 min plasma etching since Au hard mask reduced with etching time. It was shown that the aspect ratio of silicon nanotips can reach as high as 30. The intensity of Ge (311) peak increased and the one of Si peak decreased as the grazing angles decreased from 3° to 1°, which indicates that Ge nanostructure exists on top of the Si nanowire.

原文English
主出版物標題Digest of Papers - Microprocesses and Nanotechnology 2004
頁面276-277
頁數2
出版狀態Published - 2004 十二月 1
事件2004 International Microprocesses and Nanotechnology Conference - Osaka, Japan
持續時間: 2004 十月 262004 十月 29

出版系列

名字Digest of Papers - Microprocesses and Nanotechnology 2004

Other

Other2004 International Microprocesses and Nanotechnology Conference
國家Japan
城市Osaka
期間04-10-2604-10-29

指紋

Plasma etching
Nanotips
Germanium
Nanowires
Nanostructures
Vapors
Fabrication
Silicon
Hydrogen
Liquids
Aspect ratio
Masks
Etching

All Science Journal Classification (ASJC) codes

  • Engineering(all)

引用此文

Yang, M. C., Shieh, J., Ko, T. S., Chen, H. L., & Chu, T. C. (2004). Fabrication of silicon and germanium nanostructures by combination of hydrogen plasma dry etching and VLS growth mechanism. 於 Digest of Papers - Microprocesses and Nanotechnology 2004 (頁 276-277). (Digest of Papers - Microprocesses and Nanotechnology 2004).
Yang, Ming Che ; Shieh, Jiann ; Ko, Tsung Shine ; Chen, Hsuen Li ; Chu, Tieh Chi. / Fabrication of silicon and germanium nanostructures by combination of hydrogen plasma dry etching and VLS growth mechanism. Digest of Papers - Microprocesses and Nanotechnology 2004. 2004. 頁 276-277 (Digest of Papers - Microprocesses and Nanotechnology 2004).
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abstract = "Aligned silicon nanowires and germanium nanostructures were fabricated by combination of hydrogen plasma dry etching and vapor-liquid-solid (VLS) growth mechanism. The morphology of nanowires was transferred into nanotips beyond 10 min plasma etching since Au hard mask reduced with etching time. It was shown that the aspect ratio of silicon nanotips can reach as high as 30. The intensity of Ge (311) peak increased and the one of Si peak decreased as the grazing angles decreased from 3° to 1°, which indicates that Ge nanostructure exists on top of the Si nanowire.",
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Yang, MC, Shieh, J, Ko, TS, Chen, HL & Chu, TC 2004, Fabrication of silicon and germanium nanostructures by combination of hydrogen plasma dry etching and VLS growth mechanism. 於 Digest of Papers - Microprocesses and Nanotechnology 2004. Digest of Papers - Microprocesses and Nanotechnology 2004, 頁 276-277, 2004 International Microprocesses and Nanotechnology Conference, Osaka, Japan, 04-10-26.

Fabrication of silicon and germanium nanostructures by combination of hydrogen plasma dry etching and VLS growth mechanism. / Yang, Ming Che; Shieh, Jiann; Ko, Tsung Shine; Chen, Hsuen Li; Chu, Tieh Chi.

Digest of Papers - Microprocesses and Nanotechnology 2004. 2004. p. 276-277 (Digest of Papers - Microprocesses and Nanotechnology 2004).

研究成果: Conference contribution

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AU - Yang, Ming Che

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AU - Ko, Tsung Shine

AU - Chen, Hsuen Li

AU - Chu, Tieh Chi

PY - 2004/12/1

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N2 - Aligned silicon nanowires and germanium nanostructures were fabricated by combination of hydrogen plasma dry etching and vapor-liquid-solid (VLS) growth mechanism. The morphology of nanowires was transferred into nanotips beyond 10 min plasma etching since Au hard mask reduced with etching time. It was shown that the aspect ratio of silicon nanotips can reach as high as 30. The intensity of Ge (311) peak increased and the one of Si peak decreased as the grazing angles decreased from 3° to 1°, which indicates that Ge nanostructure exists on top of the Si nanowire.

AB - Aligned silicon nanowires and germanium nanostructures were fabricated by combination of hydrogen plasma dry etching and vapor-liquid-solid (VLS) growth mechanism. The morphology of nanowires was transferred into nanotips beyond 10 min plasma etching since Au hard mask reduced with etching time. It was shown that the aspect ratio of silicon nanotips can reach as high as 30. The intensity of Ge (311) peak increased and the one of Si peak decreased as the grazing angles decreased from 3° to 1°, which indicates that Ge nanostructure exists on top of the Si nanowire.

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M3 - Conference contribution

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BT - Digest of Papers - Microprocesses and Nanotechnology 2004

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Yang MC, Shieh J, Ko TS, Chen HL, Chu TC. Fabrication of silicon and germanium nanostructures by combination of hydrogen plasma dry etching and VLS growth mechanism. 於 Digest of Papers - Microprocesses and Nanotechnology 2004. 2004. p. 276-277. (Digest of Papers - Microprocesses and Nanotechnology 2004).