Fabrication of perpendicular MgO-based magnetic tunnel junctions with TbFe/FeCo electrodes

Lin Xiu Ye, Ching Ming Lee, Jia Mou Lee, Jia Hua Lin, Jin Zhen Liu, Jong Ching Wu, Te Ho Wu

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

This paper reports the results obtained using TbFe and FeCo alloys as the electrodes of MgO-based perpendicular magnetic tunnel junctions (pMTJs). Without annealing treatment, the as-deposited structure showed MgO (001) crystalline texture. The tunnel magnetoresistance (TMR) ratio measured from the patterned cell of size 3 × 6 μ m2 was 9.5% at room temperature. However, the coercivities of both free and fixed layers were reduced considerably due to the damage caused from the patterning process. The hysteresis loop measurements showed that the magnetic properties of the structures can still be maintained after annealing up to 350 °C.

原文English
文章編號6028219
頁(從 - 到)3857-3859
頁數3
期刊IEEE Transactions on Magnetics
47
發行號10
DOIs
出版狀態Published - 2011 十月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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