Extrinsic and intrinsic performance effects on the electrical property in few-layer graphene

Yow Jon Lin; Cheng Chun Hung; Jian Jhou Zeng; Hsing Cheng Chang

doi:10.1007/s00339-016-9619-4

Extrinsic and intrinsic performance effects on the electrical property in few-layer graphene

Yow Jon Lin, Cheng Chun Hung, Jian Jhou Zeng, Hsing Cheng Chang

光電科技研究所

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

The effects of extrinsic and intrinsic performances on the electrical property of few-layer graphene (FLG) are investigated. This study uses the ultraviolet irradiation technique to tune the electrical parameters of FLG for analyzing the extrinsic/intrinsic contribution to the electrical conductivity. A correlation between the temperature-dependent electrical properties, phonon and impurity scatterings, and thermal activation of charge carriers is identified. The observed temperature evolution of resistivity is understood from the competition among the effects of phonon and impurity scatterings and thermal activation of charge carriers. It is important to identify the carrier transport behavior for enhancing the FLG-based device performance.

原文	English
文章編號	83
頁（從 - 到）	1-5
頁數	5
期刊	Applied Physics A: Materials Science and Processing
卷	122
發行號	2
DOIs	https://doi.org/10.1007/s00339-016-9619-4
出版狀態	Published - 2016 二月 1

All Science Journal Classification (ASJC) codes

Chemistry(all)
Materials Science(all)

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10.1007/s00339-016-9619-4

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abstract = "The effects of extrinsic and intrinsic performances on the electrical property of few-layer graphene (FLG) are investigated. This study uses the ultraviolet irradiation technique to tune the electrical parameters of FLG for analyzing the extrinsic/intrinsic contribution to the electrical conductivity. A correlation between the temperature-dependent electrical properties, phonon and impurity scatterings, and thermal activation of charge carriers is identified. The observed temperature evolution of resistivity is understood from the competition among the effects of phonon and impurity scatterings and thermal activation of charge carriers. It is important to identify the carrier transport behavior for enhancing the FLG-based device performance.",

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