Enhancement of photocurrent of poly(3-hexylthiophene)/n-type Si diodes by incorporating the reduced graphene oxide sheets

Yow Jon Lin, Yi Min Chin

研究成果: Article同行評審

14 引文 斯高帕斯(Scopus)

摘要

In this study, the effect of the incorporation of the reduced graphene oxide (RGO) sheets into poly(3-hexylthiophene) (P3HT) on photocurrent in the RGO-doped P3HT/n-type Si diode was examined. Photocurrent proportional to RGO doping was observed. Charge detrapping phenomena are studied through time domain measurement for P3HT-based thin-film transistors. Results revealed that RGO influences the photoresponse by increasing the number of the trapped electrons in RGO as well as providing additional holes that serve to reduce the photocurrent time constant. High responsivity thus originates from efficient light absorption and carrier collection.

原文English
文章編號173301
期刊Applied Physics Letters
103
發行號17
DOIs
出版狀態Published - 2013 十月 21

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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