Electronic transport for polymer/Si-nanowire arrays/n-type Si diodes with and without Si-nanowire surface passivation

Wei Min Cho, Yow Jon Lin, Hsing Cheng Chang, Ya Hui Chen

研究成果: Article同行評審

17 引文 斯高帕斯(Scopus)

摘要

The effect of Si-nanowire (SiNW) surface passivation on electronic transport of heterojunction diodes based on the poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) and n-type Si with SiNW arrays was investigated in this study. The PEDOT:PSS/SiNWs/n-type Si diode without SiNW surface passivation shows a poor rectifying behavior with an ideality factor (η) of 7.8 and high leakage. However, the PEDOT:PSS/SiNWs/n-type Si diode with SiNW surface passivation shows a good rectifying behavior with η of 1.7 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of a combined effect of the formation of Si-O bonds and the removal of the short-lifetime charge traps. Note that SiNW surface passivation plays a significant role in the photoconduction by providing the contribution of long-lifetime charge trapping to the decay process.

原文English
頁(從 - 到)24-27
頁數4
期刊Microelectronic Engineering
108
DOIs
出版狀態Published - 2013 四月 22

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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